|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/RQK0609CQDQS" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
RQK0609CQDQS Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 78 mΩ typ.(at VGS = 4.5 V, ID = 2 A) • Low drive |