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<iframe src="https://ndatasheet.com/datasheet-frame/300/BSC118N10NSG" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
BSC118N10NS G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-re |