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<iframe src="https://ndatasheet.com/datasheet-frame/300/IXBP5N160G" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBP 5N160 G IXBH 5N160 G IC25 = 5.7 A VCES = 1600 V VCE(sat) = 4.9 V tf = 70 ns Prelimin |