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Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/CED16N10" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
CED16N10/CEU16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design |