|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/2SC3659" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCES= 1700V (Min) ·Built-in Damper Didoe ·Minimum Lot-to-Lot variations fo |