|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/DN030E" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
Semiconductor DN030E NPN Silicon Transistor Features • Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.1V Typ. @IC /IB =100mA |