|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/CEU10P10" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -8A, RDS(ON) = 350mΩ @VGS = -10V. CED10P10/CEU10P10 Super high dense cell desig |