|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/CEH2311" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
CEH2311 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -3.5A, RDS(ON) = 85mΩ @VGS = -4.5V. RDS(ON) = 130mΩ @VGS = -2.5V. High |