|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/IXBH10N170" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
www.DataSheet4U.com High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 10N170 IXBT 10N170 VCES = 1700 V IC25 = 20 A VCE(sat |