|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/H7N0203AB" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
H7N0203AB Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) =2.4 mΩ typ. • Low drive current • 4.5 V |