|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/3SK296" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
3SK296 Silicon N-Channel Dual Gate MOS FET Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of |