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Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/EPC2019" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
eGaN® FET DATASHEET EPC2019 – Enhancement Mode Power Transistor VDS , 200 V RDS(on) , 42 mΩ max ID , 8.5 A D G S EPC2019 EFFICIENT POWER CONVE |