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<iframe src="https://ndatasheet.com/datasheet-frame/300/IGC54T65T8RM" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
IGC54T65T8RM IGBT3 Chip Medium Power Features • VCES = 650 V • ICn = 100 A • 650 V trench & field stop technology • High short circuit capabi |