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Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/EPC2111" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
eGaN® FET DATASHEET EPC2111 – Enhancement-Mode GaN Power Transistor Half-Bridge VDS , 30 V RDS(on) , 19 mΩ (Q1), 8 mΩ (Q2) ID , 16 A (Q1), 16 A |