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Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/HYG800P10LR1V" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
HYG800P10LR1D/U/V P-Channel Enhancement Mode MOSFET Feature -100V/-20A RDS(ON)= 77mΩ(typ.) @ VGS = -10V RDS(ON)= 86mΩ(typ.) @ VGS = -4.5V |