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Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/HYG260P03LR1S" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
HYG260P03LR1S P-Channel Enhancement Mode MOSFET FeatureDescription z -30V/-8A RDS(ON) = 21.6mΩ(typ.) @VGS =- 10V RDS(ON) = 42 mΩ(typ.) @VGS = -4.5 |