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Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/HY025N08B6" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
HY025N08B6 N-Channel Enhancement Mode MOSFET Feature 80V/310A RDS(ON)= 2mΩ(typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged � |