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Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/HYG082N03LR1S" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
HYG082N03LR1S N-Channel Enhancement Mode MOSFET Feature 30V/11A RDS(ON)=7.3mΩ(typ.)@VGS = 10V RDS(ON)=11 mΩ(typ.)@VGS = 4.5V 100% Avalanch |