|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/PDD4960" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
40V N-Channel MOSFETs PDD4960 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. |