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Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/HY3606B" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
HY3606P/B N-Channel Enhancement Mode MOSFET Features • 60V/162A RDS(ON) = 3.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rug |