|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/CEH3688" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
CEH3688 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 3.0A, RDS(ON) = 78mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 4 |