|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/SW1N60L" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
SAMWIN SW1N60L N-channel MOSFET Features ■ High ruggedness ■ RDS(ON) (Max 23 Ω)@VGS=10V ■ Gate Charge (Max 4.5nC) ■ Improved dv/dt Capabi |