|
Html Tag |
<iframe src="https://ndatasheet.com/datasheet-frame/300/BD635" width="300" height="250" frameborder="0" marginwidth="0" marginheight="0" scrolling="no"></iframe> |
Datasheet Info |
isc Silicon NPN Power Transistor BD635 DESCRIPTION ·DC Current Gain - : hFE = 40(Min.)@ IC= 25mA ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= |